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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

China Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module supplier
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module supplier Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module supplier

Large Image :  Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Product Details:

Place of Origin: Japan
Brand Name: Toshiba
Certification: ROHS,CE,UL,CCC,VDE
Model Number: MG200Q1US51

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: Negotiable
Packaging Details: Original Packing With Good Protection Material
Delivery Time: 0-2 days
Payment Terms: Western Union, T/T, L/C,Paypal
Supply Ability: 1000pcs/Day
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Detailed Product Description
Application: High Power Switching Alternate Item Number: MG2OOQ1US51
Condition: New Warranty: One Year
Product Name: Transistor Module

Toshiba IGBT Power Module MG200Q1US51 Transistor Module

MG200Q1US51

 

 

Product Description

 

Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51

Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)

 

 

Features

High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case
 

 

F&A

 

Do you have any partner in this field?

Our company has good-relationship partners in automation control field. So we can alwasy get supporot for price and stock.

 

What is your forecast for this industry?

As more and more work done by machine,our field has lofty propect for many years.

 

What is your resources?

Our team and our channel both in purchasing and sales.
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

 

Contact Details
Guangzhou Sande Electric Co.,Ltd.

Contact Person: Ms. Amy

Tel: +86 18620505228

Fax: 86-20-55365252

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