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|Application:||Electric Locomotive||Alternate Item Number:||BSM75GB12ODN2|
Infineon IGBT Power Module BSM75GB120DN2 or BSM75GB12ODN2
Manufacture: INFINEON TECHNOLOGIES
Type of module: IGBT
Semiconductor structure: Transistor
Topology: IGBT half-bridge
Off state voltage max: 600V
Collector current: 75A
Max. forward impulse current: 150A
Electrical mounting: screw
Operating temperature: -40...125°C
Gate - emitter voltage: ±20V
Item Number: BSM75GB120DN2
Vces:1,200 Volts DC
Ices Max:1.5 MilliAmps
Iges Max:0.32 MicroAmps
Vge(th) Min/Max:6.5 Volts
Vce(sat) Max:3 Volts
H x W x D:1.2 in x 3.7 in x 1.34 in
Net Weight:8.8175 OZ
Gross Weight:5.6 OZ
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Q: Do you provide warranty for the goods?
A: Yes, we provide warranty for all the goods from us.
Q: Will you help resolve problems after sale?
A: We provide best service to customers and will be glad to offer any help.
Contact Person: Sande